STD70N2LH5 STMicroelectronics, STD70N2LH5 Datasheet - Page 2

• Manufacturer Part Number: STD70N2LH5
• Description: MOSFET N-CH 25V 48A DPAK
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STD70N2LH5

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 7.1 mOhm @ 24A, 10V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 48A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 8nC @ 5V
• Input Capacitance (ciss) @ Vds: 1300pF @ 25V
• Power - Max: 60W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0071 Ohm @ 10 V
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: +/- 22 V
• Continuous Drain Current: 48 A
• Power Dissipation: 60000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10094-2; STD70N2LH5

Electrical ratings
1
2/12
Electrical ratings
Table 2.
1. Limited by wire bonding
2. Pulse width limited by safe operating area
3. Starting Tj = 25 °C, I
Table 3.
Symbol
Rthj-case
Rthj-amb
E
Symbol
I
P
DM
I
V
V
AS
T
D
I
TOT
T
DS
GS
stg
D
T
(1)
j
(2)
(3)
j
Drain-source voltage (V
Gate-Source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Derating factor
Single pulse avalanche energy
Operating junction temperature
Storage temperature
Absolute maximum ratings
Thermal resistance
Thermal resistance junction-case max
Thermal resistance junction-case max
Maximum lead temperature for soldering purpose
D
= 24 A, V
DD
Parameter
C
= 12 V
Parameter
= 25 °C
GS
=0)
C
C
= 25 °C
= 100 °C
STD70N2LH5 - STU70N2LH5
-55 to 175
Value
± 22
TBD
192
0.4
Value
25
48
43
60
100
275
2.5
W/°C
°C/W
°C/W
Unit
Unit
mJ
°C
W
°C
V
V
A
A
A