APT6040BVFRG Microsemi Power Products Group, APT6040BVFRG Datasheet - Page 2

• Manufacturer Part Number: APT6040BVFRG
• Description: MOSFET N-CH 600V 16A TO-247
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS V®r

Specifications of APT6040BVFRG

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 400 mOhm @ 8A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 16A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 170nC @ 10V
• Input Capacitance (ciss) @ Vds: 3120pF @ 25V
• Power - Max: 250W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

DYNAMIC CHARACTERISTICS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
APT Reserves the right to change, without notice, the specifications and information contained herein.
THERMAL CHARACTERISTICS
1 Repetitive Rating: Pulse width limited by maximum junction
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
Symbol
Symbol
Symbol
temperature
t
C
t
dv
I
C
V
C
R
R
Q
Q
d(off)
I
Q
RRM
d(on)
Q
SM
t
I
SD
oss
t
t
S
rss
rr
θJC
iss
/
θJA
gd
gs
r
f
rr
g
dt
0.005
0.001
0.05
0.01
0.5
0.1
10
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current
Diode Forward Voltage
Peak Diode Recovery
Reverse Recovery Time
(I
Reverse Recovery Charge
(I
Peak Recovery Current
(I
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Characteristic
Junction to Case
Junction to Ambient
S
S
S
-5
= -16A,
= -16A,
= -16A,
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
D=0.5
0.02
0.05
0.01
0.2
0.1
di
di
di
/
/
/
dt
dt
dt
= 100A/µs)
= 100A/µs)
= 100A/µs)
10
-4
SINGLE PULSE
3
dv
1
2
/
dt
(Body Diode)
(V
5
GS
= 0V, I
10
RECTANGULAR PULSE DURATION (SECONDS)
-3
S
= -16A)
10
4 Starting T
5
-2
I
I
Test Conditions
D
D
dv
device itself.
= 16A @ 25°C
= 16A @ 25°C
V
V
/
V
V
R
V
dt
f = 1 MHz
V
DD
DD
GS
GS
DS
G
GS
T
T
T
T
T
T
numbers reflect the limitations of the test circuit rather than the
= 1.6Ω
j
j
j
j
j
j
= 300V
= 300V
= 25V
= 10V
= 15V
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
= 0V
j
= +25°C, L = 7.50mH, R
I
S
10
≤
-1
-
I
D
16A
Note:
di
Peak T J = P DM x Z θJC + T C
/
dt
MIN
MIN
MIN
Duty Factor D =
≤ 700A/µs
1.0
t 1
G
= 25Ω, Peak I
t 2
2600
TYP
TYP
305
125
115
1.9
TYP
15
26
15
52
10
38
6
9
6
t 1
APT6040B_SVFR(G)
V
/ t 2
R
≤600V
MAX
3120
MAX
250
500
MAX
425
180
170
1.3
0.50
16
64
15
L
25
75
20
18
50
12
40
10
= 16A
T
J
≤ 150
Amps
Amps
UNIT
Volts
UNIT
V/ns
UNIT
°C/W
µC
nC
ns
pF
ns
°
C