APT6040BVFRG Microsemi Power Products Group, APT6040BVFRG Datasheet

APT6040BVFRG

Manufacturer Part Number

APT6040BVFRG

Description

MOSFET N-CH 600V 16A TO-247

Manufacturer

Microsemi Power Products Group

Series

POWER MOS V®r

Datasheet

1.APT6040BVFRG.pdf (4 pages)

Specifications of APT6040BVFRG

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

400 mOhm @ 8A, 10V

Drain To Source Voltage (vdss)

600V

Current - Continuous Drain (id) @ 25° C

16A

Vgs(th) (max) @ Id

4V @ 1mA

Gate Charge (qg) @ Vgs

170nC @ 10V

Input Capacitance (ciss) @ Vds

3120pF @ 25V

Power - Max

250W

Mounting Type

Through Hole

Package / Case

TO-247

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Current page: 1 of 4
Download datasheet (151Kb)

Power MOS V

mode power MOSFETs. This new technology minimizes the JFET effect,

increases packing density and reduces the on-resistance. Power MOS V

also achieves faster switching speeds through optimized gate layout.

• Faster Switching

• Lower Leakage

•

STATIC ELECTRICAL CHARACTERISTICS

MAXIMUM RATINGS

Symbol

TO-247 or Surface Mount D

DS(on)

GS(th)

DSS

GSS

GSM

DSS

STG

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

POWER MOS V

Parameter

Drain-Source Voltage

Continuous Drain Current @ T

Pulsed Drain Current

Gate-Source Voltage Continuous

Gate-Source Voltage Transient

Total Power Dissipation @ T

Linear Derating Factor

Operating and Storage Junction Temperature Range

Lead Temperature: 0.063" from Case for 10 Sec.

Avalanche Current

Repetitive Avalanche Energy

Single Pulse Avalanche Energy

Characteristic / Test Conditions

Drain-Source Breakdown Voltage (V

Drain-Source On-State Resistance

Zero Gate Voltage Drain Current (V

Gate-Source Leakage Current (V

Gate Threshold Voltage (V

is a new generation of high voltage N-Channel enhancement

PAK Package

(Repetitive and Non-Repetitive)

APT Website - http://www.advancedpower.com

= V

= 25°C

• Avalanche Energy Rated

•

= 25°C

FAST RECOVERY BODY DIODE

, I

= ±30V, V

= 480V, V

= 600V, V

= 1mA)

= 0V, I

FREDFET

= 10V, I

= 250µA)

= 0V)

= 0V, T

= 0V)

= 8A)

APT6040BVFR

APT6040BVFRG*APT6040SVFRG*

All Ratings: T

= 125°C)

G Denotes RoHS Compliant, Pb Free Terminal Finish.

600V

= 25°C unless otherwise specified.

MIN

600

BVFR

APT6040B_SVFR(G)

16A

TO-247

-55 to 150

APT6040SVFR

TYP

±30

±40

600

250

300

960

2.0

0.40Ω Ω Ω Ω Ω

0.400

1000

±100

MAX

250

PAK

SVFR

Ohms

Amps

Watts

UNIT

W/°C

UNIT

Volts

µA

°C

Related parts for APT6040BVFRG

APT6040BVFRG Summary of contents

Page 1

... I Gate-Source Leakage Current (V GSS Gate Threshold Voltage (V V GS(th) CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT6040BVFR APT6040BVFRG*APT6040SVFRG Denotes RoHS Compliant, Pb Free Terminal Finish. ® FREDFET • Avalanche Energy Rated • FAST RECOVERY BODY DIODE All Ratings 25° ...

Page 2

DYNAMIC CHARACTERISTICS Symbol Characteristic C Input Capacitance iss C Output Capacitance oss C Reverse Transfer Capacitance rss Q 3 Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...

Page 3

V GS =6V, 7V, 10V & 15V 100 150 200 V , DRAIN-TO-SOURCE VOLTAGE (VOLTS) DS FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS > (ON) ...

Page 4

OPERATION HERE LIMITED (ON =+25°C 0 =+150°C SINGLE PULSE 0 100 V , DRAIN-TO-SOURCE VOLTAGE (VOLTS) DS FIGURE 10, MAXIMUM SAFE OPERATING AREA 20 ...

Related keywords

apt6040bvr
APT6040BVFRG datasheet
APT6040BVFRG data sheet
APT6040BVFRG pdf datasheet
APT6040BVFRG component
APT6040BVFRG part
APT6040BVFRG distributor
APT6040BVFRG RoHS
APT6040BVFRG datasheet download