BUK7610-100B,118 NXP Semiconductors, BUK7610-100B,118 Datasheet - Page 9

• Manufacturer Part Number: BUK7610-100B,118
• Description: MOSFET N-CH 100V 75A D2PAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7610-100B,118

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Mounting Type: Surface Mount
• Power - Max: 300W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 80nC @ 10V
• Vgs(th) (max) @ Id: 4V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 75A
• Drain To Source Voltage (vdss): 100V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 10 mOhm @ 25A, 10V
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.01 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 110 A
• Power Dissipation: 300000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934057113118::BUK7610-100B /T3::BUK7610-100B /T3

NXP Semiconductors
BUK7610-100B
Product data sheet
Fig 13. Gate-source voltage as a function of gate
Fig 15. Reverse diode current as a function of reverse diode voltage; typical value
V
(V)
GS
10
8
6
4
2
0
charge; typical values
0
20
V
DD
= 14 V
40
(A)
I
S
100
80
60
40
20
0
60
V
0.0
DD
All information provided in this document is subject to legal disclaimers.
Q
G
= 80 V
(nC)
03ng72
0.2
80
Rev. 03 — 12 April 2010
T
j
= 175 °C
0.4
Fig 14. Input, output and reverse transfer capacitances
0.6
(pF)
C
7000
6000
5000
4000
3000
2000
1000
0
10
as a function of drain-source voltage; typical
values
0.8
T
−1
j
N-channel TrenchMOS standard level FET
V
= 25 °C
SD
03ng71
C
C
C
(V)
oss
rss
iss
1.0
1
BUK7610-100B
10
V
© NXP B.V. 2010. All rights reserved.
DS
(V)
03ng78
10
2
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