BUK7610-100B,118 NXP Semiconductors, BUK7610-100B,118 Datasheet - Page 11

• Manufacturer Part Number: BUK7610-100B,118
• Description: MOSFET N-CH 100V 75A D2PAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7610-100B,118

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Mounting Type: Surface Mount
• Power - Max: 300W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 80nC @ 10V
• Vgs(th) (max) @ Id: 4V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 75A
• Drain To Source Voltage (vdss): 100V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 10 mOhm @ 25A, 10V
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.01 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 110 A
• Power Dissipation: 300000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934057113118::BUK7610-100B /T3::BUK7610-100B /T3

NXP Semiconductors
8. Revision history
Table 7.
BUK7610-100B
Product data sheet
Document ID
BUK7610-100B_3
Modifications:
BUK75/7610-100B_2
(9397 750 10281)
Revision history
Release date
20100412
20020919
•
•
•
BUK7610-100B_3 has been separated from datasheet BUK75/7610-100B_2
The format of this data sheet has been redesigned to comply with the new identity guidelines
of NXP Semiconductors.
Legal texts have been adapted to the new company name where appropriate.
All information provided in this document is subject to legal disclaimers.
Data sheet status
Product data
Product data sheet
Rev. 03 — 12 April 2010
Change notice
-
-
N-channel TrenchMOS standard level FET
BUK7610-100B
9397 750 09496
Supersedes
BUK75/7610-100B_2
(9397 750 10281)
© NXP B.V. 2010. All rights reserved.
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