BUK7610-100B,118 NXP Semiconductors, BUK7610-100B,118 Datasheet - Page 4

• Manufacturer Part Number: BUK7610-100B,118
• Description: MOSFET N-CH 100V 75A D2PAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7610-100B,118

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Mounting Type: Surface Mount
• Power - Max: 300W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 80nC @ 10V
• Vgs(th) (max) @ Id: 4V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 75A
• Drain To Source Voltage (vdss): 100V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 10 mOhm @ 25A, 10V
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.01 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 110 A
• Power Dissipation: 300000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934057113118::BUK7610-100B /T3::BUK7610-100B /T3

NXP Semiconductors
BUK7610-100B
Product data sheet
Fig 1.
Fig 3.
(A)
I
D
120
80
40
0
function of mounting base temperature
Normalized continuous drain current as a
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
0
50
(A)
I
D
10
10
10
1
3
2
Capped at 75 A due to package
1
Capped at 75 A due to package
Limit R
100
DSon
= V
150
DS
All information provided in this document is subject to legal disclaimers.
T
/I
mb
D
03ng70
(°C)
10
200
Rev. 03 — 12 April 2010
DC
Fig 2.
P
(%)
der
120
80
40
0
function of mounting base temperature
Normalized total power dissipation as a
0
10
N-channel TrenchMOS standard level FET
2
t
100 μs
1 ms
10 ms
100 ms
p
= 10 μs
50
V
DS
(V)
BUK7610-100B
100
02ng68
10
3
150
© NXP B.V. 2010. All rights reserved.
T
mb
03na19
(°C)
200
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