BUK7515-100A,127 NXP Semiconductors, BUK7515-100A,127 Datasheet - Page 8

• Manufacturer Part Number: BUK7515-100A,127
• Description: MOSFET N-CH 100V 75A SOT78
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7515-100A,127

• Package / Case: TO-220AB-3
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 15 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Input Capacitance (ciss) @ Vds: 6000pF @ 25V
• Power - Max: 300W
• Mounting Type: Through Hole
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.15 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 75 A
• Power Dissipation: 300000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934055409127; BUK7515-100A; BUK7515-100A

NXP Semiconductors
BUK7515-100A
Product data sheet
Fig 14. Input, output and reverse transfer capacitances
Fig 16. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values
(nF)
C
12
8
4
0
10
as a function of drain-source voltage; typical
values
V
V
−2
GS
GS
C
C
C
oss
rss
= 0 V; f = 1 MHz
= 0 V
iss
10
−1
1
(A)
I
D
100
80
60
40
20
10
0
0
All information provided in this document is subject to legal disclaimers.
V
003aaf394
DS
(V)
10
Rev. 3 — 21 April 2011
2
T
j
0.4
= 175 °C
Fig 15. Gate-source voltage as a function of gate
V
0.8
(V)
GS
12
T
8
4
0
j
V
charge; typical values
T
= 25 °C
0
SDS
j
N-channel TrenchMOS standard level FET
= 25 °C; I
003aaf396
(V)
1.2
V
D
DS
40
= 25 A
= 14 V
BUK7515-100A
80
V
DS
Q
© NXP B.V. 2011. All rights reserved.
G
= 80 V
003aaf395
(nC)
120
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