BUK7515-100A,127 NXP Semiconductors, BUK7515-100A,127 Datasheet - Page 10

• Manufacturer Part Number: BUK7515-100A,127
• Description: MOSFET N-CH 100V 75A SOT78
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7515-100A,127

• Package / Case: TO-220AB-3
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 15 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Input Capacitance (ciss) @ Vds: 6000pF @ 25V
• Power - Max: 300W
• Mounting Type: Through Hole
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.15 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 75 A
• Power Dissipation: 300000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934055409127; BUK7515-100A; BUK7515-100A

NXP Semiconductors
8. Revision history
Table 7.
BUK7515-100A
Product data sheet
Document ID
BUK7515-100A v.3
Modifications:
BUK7515-100A_2
Revision history
Release date
20110421
20030601
•
•
The format of this data sheet has been redesigned to comply with the new identity guidelines
of NXP Semiconductors.
Legal texts have been adapted to the new company name where appropriate.
All information provided in this document is subject to legal disclaimers.
Data sheet status
Product data sheet
Product specification
Rev. 3 — 21 April 2011
N-channel TrenchMOS standard level FET
Change notice
-
-
BUK7515-100A
Supersedes
BUK7515-100A_2
BUK7515-100A_1
© NXP B.V. 2011. All rights reserved.
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