BUK762R7-30B,118 NXP Semiconductors, BUK762R7-30B,118 Datasheet - Page 11

• Manufacturer Part Number: BUK762R7-30B,118
• Description: MOSFET N-CH 30V 75A D2PAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK762R7-30B,118

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Mounting Type: Surface Mount
• Power - Max: 300W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 91nC @ 10V
• Vgs(th) (max) @ Id: 4V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 75A
• Drain To Source Voltage (vdss): 30V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.7 mOhm @ 25A, 10V
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0027 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 241 A
• Power Dissipation: 300000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934057087118::BUK762R7-30B /T3::BUK762R7-30B /T3

NXP Semiconductors
8. Revision history
Table 7.
BUK762R7-30B
Product data sheet
Document ID
BUK762R7-30B v.4
Modifications:
BUK75_76_7E2R7_30B v.3
(9397 750 12048)
Revision history
Release date Data sheet status
20100608
20031013
•
•
•
The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
Legal texts have been adapted to the new company name where appropriate.
Type number BUK762R7-30B separated from data sheet BUK75_76_7E2R7_30B v.3.
All information provided in this document is subject to legal disclaimers.
Product data sheet
Product data
Rev. 04 — 8 June 2010
Change notice
-
-
N-channel TrenchMOS standard level FET
BUK762R7-30B
Supersedes
BUK75_76_7E2R7_30B v.3
-
© NXP B.V. 2010. All rights reserved.
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