BUK762R7-30B NXP Semiconductors, BUK762R7-30B Datasheet
BUK762R7-30B
Available stocks
Related parts for BUK762R7-30B
BUK762R7-30B Summary of contents
Page 1
... BUK762R7-30B N-channel TrenchMOS standard level FET Rev. 04 — 8 June 2010 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. ...
Page 2
... Simplified outline SOT404 (D2PAK) Description plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped) All information provided in this document is subject to legal disclaimers. Rev. 04 — 8 June 2010 BUK762R7-30B Graphic symbol mbb076 Version SOT404 © NXP B.V. 2010. All rights reserved ...
Page 3
... ° ≤ Ω sup °C; unclamped GS j(init) All information provided in this document is subject to legal disclaimers. Rev. 04 — 8 June 2010 BUK762R7-30B Min Typ Max - - - [1] Figure 241 [2] Figure 1 ...
Page 4
... Fig 2. Limit DSon DS D Capped due to package 1 All information provided in this document is subject to legal disclaimers. Rev. 04 — 8 June 2010 BUK762R7-30B N-channel TrenchMOS standard level FET 120 100 150 Normalized total power dissipation as a function of mounting base temperature 03ng27 = 10 μ ...
Page 5
... BUK762R7-30B Product data sheet Conditions see Figure 4 minimum footprint ; mounted on a printed-circuit board −5 −4 − All information provided in this document is subject to legal disclaimers. Rev. 04 — 8 June 2010 BUK762R7-30B N-channel TrenchMOS standard level FET Min Typ - - - 50 03ng28 t p δ ...
Page 6
... ° see Figure /dt = -100 A/µ - ° All information provided in this document is subject to legal disclaimers. Rev. 04 — 8 June 2010 BUK762R7-30B Min Typ Max Unit ...
Page 7
... DS Fig 6. 03aa35 typ max (V) GS Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 04 — 8 June 2010 BUK762R7-30B N-channel TrenchMOS standard level FET 5 R DSon (mΩ Drain-source on-state resistance as a function of drain current; typical values ...
Page 8
... Label 210 280 350 I (A) D Fig 12. Normalized drain-source on-state resistance All information provided in this document is subject to legal disclaimers. Rev. 04 — 8 June 2010 BUK762R7-30B N-channel TrenchMOS standard level FET 5 GS(th) (V) 4 max 3 typ 2 min 1 0 − junction temperature ...
Page 9
... ° 0.2 0.4 0.6 All information provided in this document is subject to legal disclaimers. Rev. 04 — 8 June 2010 BUK762R7-30B N-channel TrenchMOS standard level FET 0 − function of drain-source voltage; typical values 03nh09 0.8 1.0 V (V) SD © NXP B.V. 2010. All rights reserved. ...
Page 10
... max. 1.60 10.30 2.90 15.80 11 2.54 1.20 9.70 2.10 14.80 REFERENCES JEDEC JEITA All information provided in this document is subject to legal disclaimers. Rev. 04 — 8 June 2010 BUK762R7-30B N-channel TrenchMOS standard level FET mounting base 2.60 2.20 EUROPEAN ISSUE DATE PROJECTION © NXP B.V. 2010. All rights reserved. SOT404 05-02-11 06-03- ...
Page 11
... The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. Legal texts have been adapted to the new company name where appropriate. Type number BUK762R7-30B separated from data sheet BUK75_76_7E2R7_30B v.3. Product data All information provided in this document is subject to legal disclaimers. ...
Page 12
... All information provided in this document is subject to legal disclaimers. Rev. 04 — 8 June 2010 BUK762R7-30B N-channel TrenchMOS standard level FET © NXP B.V. 2010. All rights reserved ...
Page 13
... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 04 — 8 June 2010 BUK762R7-30B N-channel TrenchMOS standard level FET © NXP B.V. 2010. All rights reserved ...
Page 14
... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 8 June 2010 Document identifier: BUK762R7-30B ...