BUK762R7-30B,118 NXP Semiconductors, BUK762R7-30B,118 Datasheet
BUK762R7-30B,118
Specifications of BUK762R7-30B,118
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BUK762R7-30B,118 Summary of contents
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... BUK762R7-30B N-channel TrenchMOS standard level FET Rev. 04 — 8 June 2010 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. ...
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... N-channel TrenchMOS standard level FET Simplified outline SOT404 (D2PAK) Description plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped) All information provided in this document is subject to legal disclaimers. Rev. 04 — 8 June 2010 BUK762R7-30B Graphic symbol mbb076 Version SOT404 © NXP B.V. 2010. All rights reserved ...
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... ° see Figure °C; see Figure °C mb ≤ 10 µs; pulsed ° ≤ Ω sup °C; unclamped GS j(init) All information provided in this document is subject to legal disclaimers. Rev. 04 — 8 June 2010 BUK762R7-30B Min Typ Max - - - [1] Figure 241 [2] Figure [2] Figure 967 ...
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... T (°C) mb Fig 2. Limit DSon DS D Capped due to package 1 All information provided in this document is subject to legal disclaimers. Rev. 04 — 8 June 2010 BUK762R7-30B N-channel TrenchMOS standard level FET 120 100 150 Normalized total power dissipation as a function of mounting base temperature 03ng27 = 10 μ 100 μ ...
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... Transient thermal impedance from junction to mounting base as a function of pulse duration BUK762R7-30B Product data sheet Conditions see Figure 4 minimum footprint ; mounted on a printed-circuit board −5 −4 − All information provided in this document is subject to legal disclaimers. Rev. 04 — 8 June 2010 BUK762R7-30B N-channel TrenchMOS standard level FET Min Typ - - - 50 03ng28 t p δ ...
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... °C j from source lead to source bond pad ; ° ° see Figure /dt = -100 A/µ - ° All information provided in this document is subject to legal disclaimers. Rev. 04 — 8 June 2010 BUK762R7-30B Min Typ Max Unit 4 500 µA - 0.02 1 µ ...
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... V (V) DS Fig 6. 03aa35 typ max (V) GS Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 04 — 8 June 2010 BUK762R7-30B N-channel TrenchMOS standard level FET 5 R DSon (mΩ Drain-source on-state resistance as a function of drain current; typical values 100 ...
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... Fig 10. Gate-source threshold voltage as a function of 03nh15 Label 210 280 350 I (A) D Fig 12. Normalized drain-source on-state resistance All information provided in this document is subject to legal disclaimers. Rev. 04 — 8 June 2010 BUK762R7-30B N-channel TrenchMOS standard level FET 5 GS(th) (V) 4 max 3 typ 2 min 1 0 − junction temperature ...
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... ° 0.2 0.4 0.6 All information provided in this document is subject to legal disclaimers. Rev. 04 — 8 June 2010 BUK762R7-30B N-channel TrenchMOS standard level FET 0 − function of drain-source voltage; typical values 03nh09 0.8 1.0 V (V) SD © NXP B.V. 2010. All rights reserved. ...
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... REFERENCES JEDEC JEITA All information provided in this document is subject to legal disclaimers. Rev. 04 — 8 June 2010 BUK762R7-30B N-channel TrenchMOS standard level FET mounting base 2.60 2.20 EUROPEAN ISSUE DATE PROJECTION © NXP B.V. 2010. All rights reserved. ...
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... The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. Legal texts have been adapted to the new company name where appropriate. Type number BUK762R7-30B separated from data sheet BUK75_76_7E2R7_30B v.3. Product data All information provided in this document is subject to legal disclaimers. ...
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... All information provided in this document is subject to legal disclaimers. Rev. 04 — 8 June 2010 BUK762R7-30B N-channel TrenchMOS standard level FET © NXP B.V. 2010. All rights reserved ...
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... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 04 — 8 June 2010 BUK762R7-30B N-channel TrenchMOS standard level FET © NXP B.V. 2010. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 8 June 2010 Document identifier: BUK762R7-30B ...