BUK9606-55B,118 NXP Semiconductors, BUK9606-55B,118 Datasheet - Page 9

• Manufacturer Part Number: BUK9606-55B,118
• Description: MOSFET N-CH 55V 75A D2PAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9606-55B,118

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Mounting Type: Surface Mount
• Power - Max: 258W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 60nC @ 5V
• Vgs(th) (max) @ Id: 2V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 75A
• Drain To Source Voltage (vdss): 55V
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5.4 mOhm @ 25A, 10V
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0054 Ohm @ 10 V
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: 15 V
• Continuous Drain Current: 146 A
• Power Dissipation: 258000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934057312118::BUK9606-55B /T3::BUK9606-55B /T3

NXP Semiconductors
BUK9606-55B_4
Product data sheet
Fig 13. Source current as a function of source-drain
Fig 15. Gate charge waveform definitions
(A)
I
S
100
75
50
25
0
0.0
voltage; typical values
V
V
V
V
GS(pl)
DS
GS(th)
GS
0.2
Q
GS1
I
Q
D
GS
0.4
T
Q
j
= 175 ° C
GS2
Q
G(tot)
0.6
Q
GD
0.8
T
j
003aaa508
= 25 ° C
V
SD
03nj60
(V)
1.0
Rev. 04 — 23 July 2009
Fig 14. Gate-source voltage as a function of gate
Fig 16. Input, output and reverse transfer capacitances
V
(V)
GS
(pF)
8000
6000
4000
2000
C
5
4
3
2
1
0
0
10
charge; typical values
as a function of drain-source voltage; typical
values
0
-1
20
1
V
C
C
C
DD
rss
oss
iss
= 14 V
BUK9606-55B
N-channel TrenchMOS FET
10
40
V
DD
V
© NXP B.V. 2009. All rights reserved.
Q
= 44 V
DS
G
(nC)
(V)
03nj67
03nj61
10
60
2
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