BUK9606-55B,118 NXP Semiconductors, BUK9606-55B,118 Datasheet - Page 5

• Manufacturer Part Number: BUK9606-55B,118
• Description: MOSFET N-CH 55V 75A D2PAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9606-55B,118

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Mounting Type: Surface Mount
• Power - Max: 258W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 60nC @ 5V
• Vgs(th) (max) @ Id: 2V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 75A
• Drain To Source Voltage (vdss): 55V
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5.4 mOhm @ 25A, 10V
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0054 Ohm @ 10 V
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: 15 V
• Continuous Drain Current: 146 A
• Power Dissipation: 258000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934057312118::BUK9606-55B /T3::BUK9606-55B /T3

NXP Semiconductors
5. Thermal characteristics
Table 5.
BUK9606-55B_4
Product data sheet
Symbol
R
R
Fig 4.
th(j-mb)
th(j-a)
Z
(K/W)
th(j-mb)
10
10
10
-1
-2
-3
1
10
Transient thermal impedance from junction to mounting base as a function of pulse duration
-6
0.1
0.05
Thermal characteristics
δ = 0.5
0.2
0.02
single shot
Parameter
thermal resistance from
junction to mounting
base
thermal resistance from
junction to ambient
10
-5
Conditions
see
Figure 4
10
-4
Rev. 04 — 23 July 2009
10
-3
10
-2
Min
-
-
BUK9606-55B
N-channel TrenchMOS FET
10
P
-1
Typ
-
50
t
p
T
t
p
© NXP B.V. 2009. All rights reserved.
(s)
δ =
Max
0.58
-
03nh84
T
t
p
t
1
Unit
K/W
K/W
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