BUK9606-55B,118 NXP Semiconductors, BUK9606-55B,118 Datasheet - Page 8

• Manufacturer Part Number: BUK9606-55B,118
• Description: MOSFET N-CH 55V 75A D2PAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9606-55B,118

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Mounting Type: Surface Mount
• Power - Max: 258W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 60nC @ 5V
• Vgs(th) (max) @ Id: 2V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 75A
• Drain To Source Voltage (vdss): 55V
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5.4 mOhm @ 25A, 10V
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0054 Ohm @ 10 V
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: 15 V
• Continuous Drain Current: 146 A
• Power Dissipation: 258000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934057312118::BUK9606-55B /T3::BUK9606-55B /T3

NXP Semiconductors
BUK9606-55B_4
Product data sheet
Fig 9.
Fig 11. Drain-source on-state resistance as a function
V
GS(th)
R
(V)
(mΩ)
DSon
2.5
2.0
1.5
1.0
0.5
0
7
6
5
4
−60
junction temperature
of gate-source voltage; typical values
Gate-source threshold voltage as a function of
3
0
7
60
max
min
typ
11
120
V
GS
T
j
(V)
(°C)
03nj64
03ng52
180
15
Rev. 04 — 23 July 2009
Fig 10. Sub-threshold drain current as a function of
Fig 12. Normalized drain-source on-state resistance
(A)
I
10
10
10
10
10
10
D
1.5
0.5
a
−1
−2
−3
−4
−5
−6
2
1
0
gate-source voltage
-60
factor as a function of junction temperature
0
0
min
1
BUK9606-55B
N-channel TrenchMOS FET
60
typ
2
120
max
V
© NXP B.V. 2009. All rights reserved.
GS
T
j
(V)
03ne89
( ° C)
03ng53
180
3
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