BUK7606-55B,118 NXP Semiconductors, BUK7606-55B,118 Datasheet - Page 7

MOSFET N-CH 55V 75A D2PAK

BUK7606-55B,118

Manufacturer Part Number
BUK7606-55B,118
Description
MOSFET N-CH 55V 75A D2PAK
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet

Specifications of BUK7606-55B,118

Package / Case
D²Pak, TO-263 (2 leads + tab)
Mounting Type
Surface Mount
Power - Max
254W
Fet Type
MOSFET N-Channel, Metal Oxide
Gate Charge (qg) @ Vgs
64nC @ 10V
Vgs(th) (max) @ Id
4V @ 1mA
Current - Continuous Drain (id) @ 25° C
75A
Drain To Source Voltage (vdss)
55V
Fet Feature
Standard
Rds On (max) @ Id, Vgs
6 mOhm @ 25A, 10V
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0063 Ohm @ 10 V
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
154 A
Power Dissipation
300000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934057692118::BUK7606-55B /T3::BUK7606-55B /T3
NXP Semiconductors
BUK7606-55B
Product data sheet
Fig 5.
Fig 7.
(A)
(A)
I
I
10
10
10
10
10
10
D
D
350
280
210
140
70
−1
−2
−3
−4
−5
−6
0
function of drain-source voltage; typical values
gate-source voltage
Output characteristics: drain current as a
Sub-threshold drain current as a function of
0
0
20
10
2
9
2
8
7.5
4
min
typ
6
Label is V
7
6.5
6
5.5
5
4.5
4
max
V
All information provided in this document is subject to legal disclaimers.
GS
8
GS
V
DS
(V)
(V)
03aa35
03nl93
(V)
10
6
Rev. 02 — 21 June 2010
Fig 6.
Fig 8.
R
(mΩ)
(S)
DSon
g
fs
80
60
40
20
12
10
8
6
4
0
of gate-source voltage; typical values
drain current; typical values
Drain-source on-state resistance as a function
Forward transconductance as a function of
5
0
N-channel TrenchMOS standard level FET
10
20
BUK7606-55B
15
40
V
© NXP B.V. 2010. All rights reserved.
I
GS
D
(A)
(V)
03nl92
03nl90
20
60
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