BUK7606-55B,118 NXP Semiconductors, BUK7606-55B,118 Datasheet - Page 2

• Manufacturer Part Number: BUK7606-55B,118
• Description: MOSFET N-CH 55V 75A D2PAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7606-55B,118

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Mounting Type: Surface Mount
• Power - Max: 254W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 64nC @ 10V
• Vgs(th) (max) @ Id: 4V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 75A
• Drain To Source Voltage (vdss): 55V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 6 mOhm @ 25A, 10V
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0063 Ohm @ 10 V
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 154 A
• Power Dissipation: 300000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934057692118::BUK7606-55B /T3::BUK7606-55B /T3

NXP Semiconductors
2. Pinning information
Table 2.
[1]
3. Ordering information
Table 3.
BUK7606-55B
Product data sheet
Pin
1
2
3
mb
Type number
BUK7606-55B
It is not possible to make connection to pin 2.
Symbol Description
G
D
S
D
Pinning information
Ordering information
1.4 Quick reference data
gate
drain
source
mounting base; connected to
drain
Table 1.
[1]
Package
Name
D2PAK
Symbol
V
P
Static characteristics
R
Avalanche ruggedness
E
Dynamic characteristics
Q
I
D
[1]
DS
tot
DS(AL)S
DSon
GD
Continuous current is limited by package.
Quick reference data
Parameter
drain-source
voltage
drain current
total power
dissipation
drain-source
on-state
resistance
non-repetitive
drain-source
avalanche energy
gate-drain charge V
Description
plastic single-ended surface-mounted package (D2PAK); 3 leads
(one lead cropped)
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 21 June 2010
Simplified outline
SOT404 (D2PAK)
Conditions
T
V
see
T
V
T
see
I
R
T
V
see
D
j
mb
j
j(init)
GS
GS
GS
DS
GS
≥ 25 °C; T
= 25 °C;
= 75 A; V
Figure
Figure
Figure 13
= 25 °C; see
= 10 V; T
= 10 V; I
= 10 V; I
= 44 V; T
= 50 Ω; V
= 25 °C; unclamped
1
mb
2
3
1; see
11; see
sup
j
D
D
≤ 175 °C
mb
j
GS
= 25 °C;
= 25 A;
= 25 A;
≤ 55 V;
N-channel TrenchMOS standard level FET
= 25 °C;
= 10 V;
Figure 2
Figure 3
Figure 12
Graphic symbol
BUK7606-55B
[1]
mbb076
G
Min
-
-
-
-
-
-
© NXP B.V. 2010. All rights reserved.
D
S
Typ
-
-
-
5.1
-
19
Version
SOT404
Max Unit
55
75
254
6
680
-
2 of 14
V
A
W
mΩ
mJ
nC