BUK9506-75B,127 NXP Semiconductors, BUK9506-75B,127 Datasheet - Page 4

• Manufacturer Part Number: BUK9506-75B,127
• Description: MOSFET N-CH 75V 75A TO220AB
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9506-75B,127

• Package / Case: TO-220AB-3
• Mounting Type: Through Hole
• Power - Max: 300W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 95nC @ 5V
• Vgs(th) (max) @ Id: 2V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 75A
• Drain To Source Voltage (vdss): 75V
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5.5 mOhm @ 25A, 10V
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0055 Ohm @ 10 V
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 153 A
• Power Dissipation: 300000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934057111127::BUK9506-75B::BUK9506-75B

Philips Semiconductors
4. Thermal characteristics
Table 3:
9397 750 10279
Product data
Symbol Parameter
R
R
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.
th(j-mb)
th(j-a)
Z th(j-mb)
(K/W)
10 -1
10 -2
10 -3
1
10 -6
thermal resistance from junction to
mounting base
thermal resistance from junction to
ambient
Thermal characteristics
SOT78
SOT404
0.2
0.1
0.05
0.02
single shot
= 0.5
4.1 Transient thermal impedance
10 -5
10 -4
Rev. 02 — 30 September 2002
Conditions
Figure 4
vertical in still air
mounted on a printed circuit board;
minimum footprint
10 -3
10 -2
BUK95/9606-75B
TrenchMOS™ logic level FET
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
10 -1
P
t p
Min Typ Max Unit
-
-
-
T
t p (s)
-
60
50
=
03ng88
t p
T
t
1
0.5
-
-
4 of 15
K/W
K/W
K/W