PSMN030-150B,118 NXP Semiconductors, PSMN030-150B,118 Datasheet - Page 3

• Manufacturer Part Number: PSMN030-150B,118
• Description: MOSFET N-CH 150V 55.5A SOT404
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PSMN030-150B,118

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Mounting Type: Surface Mount
• Power - Max: 250W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 98nC @ 10V
• Vgs(th) (max) @ Id: 4V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 55.5A
• Drain To Source Voltage (vdss): 150V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 30 mOhm @ 25A, 10V
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.03 Ohm @ 10 V
• Drain-source Breakdown Voltage: 150 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 55.5 A
• Power Dissipation: 250000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934056598118::PSMN030-150B /T3::PSMN030-150B /T3

NXP Semiconductors
PSMN030-150B
Product data sheet
Fig 1.
Fig 3.
P
(%)
I
(A)
DM
der
100
10
10
80
60
40
20
10
0
1
3
2
function of mounting base temperature
currents as a function of drain-source voltage
Normalized total power dissipation as a
T
Safe operating area; continuous and peak drain
0
1
mb
R
DS(on)
= 25 °C; I
= V
50
DS
/ I
10
DM
D.C.
D
is single pulse
100
10
2
150
tp = 10 μs
100 μs
1 ms
10 ms
100 ms
V
All information provided in this document is subject to legal disclaimers.
DS
T
mb
003aaf138
003aaf140
(V)
(°C)
Rev. 02 — 13 December 2010
200
10
3
N-channel TrenchMOS SiliconMAX standard level FET
Fig 2.
Fig 4.
(%)
l
(A)
I
AS
D
100
10
80
60
40
20
10
0
1
2
10
function of mounting base temperature
current as a function of avalanche period
Normalized continuous drain current as a
unclamped inductive load
Single-shot avalanche rating; avalanche
0
−3
T
j
prior to avalanche = 150 °C
10
50
−2
PSMN030-150B
10
100
−1
150
1
© NXP B.V. 2010. All rights reserved.
T
t
AV
mb
003aaf139
003aaf155
25 °C
(ms)
(°C)
200
10
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