BUK7E04-40A,127 NXP Semiconductors, BUK7E04-40A,127 Datasheet - Page 4
![MOSFET N-CH TRENCH 40V I2PAK](/photos/5/32/53210/i__pak-3__to-220ab__sot226_pkg_sml.jpg)
BUK7E04-40A,127
Manufacturer Part Number
BUK7E04-40A,127
Description
MOSFET N-CH TRENCH 40V I2PAK
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet
1.BUK7E04-40A127.pdf
(14 pages)
Specifications of BUK7E04-40A,127
Package / Case
I²Pak, TO-220AB (3 straight leads + tab)
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
4.5 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
75A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
117nC @ 10V
Input Capacitance (ciss) @ Vds
5730pF @ 25V
Power - Max
300W
Mounting Type
Through Hole
Gate Charge Qg
117 nC
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
8.5 mOhms
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
198 A
Power Dissipation
300 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934056701127
NXP Semiconductors
BUK7E04-40A
Product data sheet
Fig 1.
Fig 3.
(A)
I
D
200
150
100
50
0
function of mounting base temperature
25
Normalized continuous drain current as a
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
Capped at 75 A due to package
50
(A)
I
75
D
10
10
10
1
3
2
1
100
Capped at 75 A due to package
R
DSon
125
= V
150
DS
/ I
D
All information provided in this document is subject to legal disclaimers.
175
T
mb
03ne93
(°C)
200
Rev. 03 — 15 June 2010
DC
10
Fig 2.
P
(%)
der
120
80
40
0
function of mounting base temperature
Normalized total power dissipation as a
0
N-channel TrenchMOS standard level FET
V
DS
(V)
50
t
100 μs
1 ms
10 ms
100 ms
p
= 10 μs
BUK7E04-40A
100
03ne68
102
150
© NXP B.V. 2010. All rights reserved.
T
mb
03na19
(°C)
200
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