BUK7E04-40A,127 NXP Semiconductors, BUK7E04-40A,127 Datasheet - Page 4

• Manufacturer Part Number: BUK7E04-40A,127
• Description: MOSFET N-CH TRENCH 40V I2PAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7E04-40A,127

• Package / Case: I²Pak, TO-220AB (3 straight leads + tab)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4.5 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 117nC @ 10V
• Input Capacitance (ciss) @ Vds: 5730pF @ 25V
• Power - Max: 300W
• Mounting Type: Through Hole
• Gate Charge Qg: 117 nC
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 8.5 mOhms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 198 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934056701127

NXP Semiconductors
BUK7E04-40A
Product data sheet
Fig 1.
Fig 3.
(A)
I
D
200
150
100
50
0
function of mounting base temperature
25
Normalized continuous drain current as a
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
Capped at 75 A due to package
50
(A)
I
75
D
10
10
10
1
3
2
1
100
Capped at 75 A due to package
R
DSon
125
= V
150
DS
/ I
D
All information provided in this document is subject to legal disclaimers.
175
T
mb
03ne93
(°C)
200
Rev. 03 — 15 June 2010
DC
10
Fig 2.
P
(%)
der
120
80
40
0
function of mounting base temperature
Normalized total power dissipation as a
0
N-channel TrenchMOS standard level FET
V
DS
(V)
50
t
100 μs
1 ms
10 ms
100 ms
p
= 10 μs
BUK7E04-40A
100
03ne68
102
150
© NXP B.V. 2010. All rights reserved.
T
mb
03na19
(°C)
200
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