BUK7E04-40A,127 NXP Semiconductors, BUK7E04-40A,127 Datasheet - Page 2
![MOSFET N-CH TRENCH 40V I2PAK](/photos/5/32/53210/i__pak-3__to-220ab__sot226_pkg_sml.jpg)
BUK7E04-40A,127
Manufacturer Part Number
BUK7E04-40A,127
Description
MOSFET N-CH TRENCH 40V I2PAK
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet
1.BUK7E04-40A127.pdf
(14 pages)
Specifications of BUK7E04-40A,127
Package / Case
I²Pak, TO-220AB (3 straight leads + tab)
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
4.5 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
75A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
117nC @ 10V
Input Capacitance (ciss) @ Vds
5730pF @ 25V
Power - Max
300W
Mounting Type
Through Hole
Gate Charge Qg
117 nC
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
8.5 mOhms
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
198 A
Power Dissipation
300 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934056701127
NXP Semiconductors
2. Pinning information
Table 2.
3. Ordering information
Table 3.
BUK7E04-40A
Product data sheet
Pin
1
2
3
mb
Type number
BUK7E04-40A
Symbol Description
G
D
S
D
Pinning information
Ordering information
gate
drain
source
mounting base; connected to
drain
Table 1.
[1]
Package
Name
I2PAK
Symbol
Avalanche ruggedness
E
Dynamic characteristics
Q
DS(AL)S
GD
Continuous current is limited by package.
Quick reference data
Parameter
non-repetitive
drain-source avalanche
energy
gate-drain charge
Description
plastic single-ended package (I2PAK); TO-262
All information provided in this document is subject to legal disclaimers.
Rev. 03 — 15 June 2010
Simplified outline
SOT226 (I2PAK)
…continued
1
Conditions
I
R
T
V
V
see
D
j(init)
GS
DS
mb
GS
2
= 75 A; V
Figure 13
= 32 V; T
= 50 Ω; V
= 10 V; I
3
= 25 °C; unclamped
N-channel TrenchMOS standard level FET
sup
D
j
GS
= 25 °C;
= 25 A;
≤ 40 V;
= 10 V;
Graphic symbol
BUK7E04-40A
mbb076
G
Min
-
-
© NXP B.V. 2010. All rights reserved.
D
S
Typ
-
50
SOT226
Version
Max Unit
1.6
-
2 of 14
J
nC