BUK7628-100A/C,118 NXP Semiconductors, BUK7628-100A/C,118 Datasheet - Page 6

• Manufacturer Part Number: BUK7628-100A/C,118
• Description: MOSFET N-CH 100V SOT404
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7628-100A/C,118

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 28 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 47A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Input Capacitance (ciss) @ Vds: 3100pF @ 25V
• Power - Max: 166W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Lead free by exemption / RoHS compliant by exemption
• Gate Charge (qg) @ Vgs: -

Philips Semiconductors
March 2000
TrenchMOS
Standard level FET
current(I
Fig.18. Maximum permissible repetitive avalanche
VGS
0
100
I
AV
10
1
0.001
Fig.17. Avalanche energy test circuit.
AV
Tj prior to avanche 150ºC
W
) versus avalanche time(t
DSS
RGS
0.01
0.5 LI
Avalanche Time, t
inductive loads.
transistor
D
2
0.1
BV
DSS
AV
L
(ms)
VDS
BV
T.U.T.
DSS
1
25ºC
AV
) for unclamped
shunt
R 01
V
DD
-
+
10
-ID/100
VDD
6
VGS
0
Fig.19. Switching test circuit.
RG
RD
VDS
T.U.T.
BUK7528-100A
BUK7628-100A
Product specification
-
+
Rev 1.000
VDD