BUK7628-100A/C,118 NXP Semiconductors, BUK7628-100A/C,118 Datasheet - Page 4

• Manufacturer Part Number: BUK7628-100A/C,118
• Description: MOSFET N-CH 100V SOT404
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7628-100A/C,118

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 28 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 47A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Input Capacitance (ciss) @ Vds: 3100pF @ 25V
• Power - Max: 166W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Lead free by exemption / RoHS compliant by exemption
• Gate Charge (qg) @ Vgs: -

Philips Semiconductors
March 2000
TrenchMOS
Standard level FET
31
29
27
25
23
21
19
17
15
65
60
55
50
45
40
35
30
25
20
15
ID/A
RDS(ON) Ohm
5
Fig.5. Typical output characteristics, T
Fig.6. Typical on-state resistance, T
Fig.7. Typical on-state resistance, T
5
RDS(ON)/mOhm
180
160
140
120
100
80
60
40
20
0
0
R
DS(ON)
25
7
R
I
D
DS(ON)
= f(V
= f(V
2
5.5
45
= f(I
GS
transistor
DS
); conditions: I
9
); parameter V
D
4
VGS/V
); paramter V
6.0
ID/A
65
VDS/V
10.0
11
6
85
20.0
6.5
D
GS
VGS/V =
= 25 A;
GS
j
j
105
13
j
= 25 ˚C.
= 25 ˚C.
8
= 25 ˚C.
7.0
10.0
7.5
8.0
7.5
13.5
7.0
6.0
125
9.0
8.0
6.5
5.5
5.0
4.5
10
15
4
Fig.10. Normalised drain-source on-state resistance.
gfs/S
ID/A
1.5
0.5
I
a = R
D
2
1
0
-100
Fig.9. Typical transconductance, T
100
= f(V
45
40
35
30
25
20
15
10
a
90
80
70
60
50
40
30
20
10
5
0
0
Fig.8. Typical transfer characteristics.
0
0
DS(ON)
GS
g
-50
) ; conditions: V
fs
/R
= f(I
20
DS(ON)25 ˚C
D
); conditions: V
2
0
40
Tj/C= 175
= f(T
Tj / C
ID/A
50
DS
VGS/V
j
); I
4
= 25 V; parameter T
o
C
60
D
BUK7528-100A
BUK7628-100A
= 25 A; V
DS
100
Product specification
25
= 25 V
o
C
30V TrenchMOS
80
6
j
150
= 25 ˚C.
GS
Rev 1.000
= 5 V
100
200
j
8