BUK7628-100A/C,118 NXP Semiconductors, BUK7628-100A/C,118 Datasheet - Page 5

• Manufacturer Part Number: BUK7628-100A/C,118
• Description: MOSFET N-CH 100V SOT404
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7628-100A/C,118

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 28 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 47A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Input Capacitance (ciss) @ Vds: 3100pF @ 25V
• Power - Max: 166W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Lead free by exemption / RoHS compliant by exemption
• Gate Charge (qg) @ Vgs: -

Philips Semiconductors
March 2000
TrenchMOS
Standard level FET
1E-01
1E-02
1E-03
1E-04
1E-05
1E-06
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
V
0.01
Capacitance / nF
Fig.13. Typical capacitances, C
-100
5
4
3
2
1
0
I
C = f(V
GS(TO)
D
VGS(TO) / V
0
= f(V
Fig.12. Sub-threshold drain current.
max.
min.
typ.
Fig.11. Gate threshold voltage.
= f(T
-50
GS)
DS
); conditions: V
; conditions: T
1
0.1
j
); conditions: I
0
transistor
2%
Tj / C
2
VDS/V
50
1
j
GS
D
= 25 ˚C; V
typ
= 1 mA; V
= 0 V; f = 1 MHz
100
Sub-Threshold Conduction
3
10
iss
, C
150
98%
BUK759-60
DS
DS
oss
4
= V
, C
= V
200
GS
rss
GS
100
.
Ciss
Coss
Crss
5
5
Fig.14. Typical turn-on gate-charge characteristics.
VGS / V
IF/A
V
I
Fig.16. Normalised avalanche energy rating.
100
F
GS
120
110
100
90
80
70
60
50
40
30
20
10
90
80
70
60
50
40
30
20
10
= f(V
0
0
= f(Q
0.0
10
Fig.15. Typical reverse diode current.
20
9
8
7
6
5
4
3
2
1
0
W
WDSS%
0
SDS
DSS
G
); conditions: I
0.2
40
); conditions: V
% = f(T
60
0.4
mb
Tj/C= 175
80
50
); conditions: I
0.6
VDS = 14V
Tmb / C
VSDS/V
D
100
QG / nC
o
GS
= 25 A; parameter V
C
= 0 V; parameter T
0.8
120
BUK7528-100A
BUK7628-100A
Product specification
100
140
D
1.0
VDS = 44V
= 75 A
25
o
C
160
1.2
Rev 1.000
180
DS
150
1.4
j