BUK765R2-40B,118 NXP Semiconductors, BUK765R2-40B,118 Datasheet - Page 5

• Manufacturer Part Number: BUK765R2-40B,118
• Description: MOSFET N-CH 40V 75A D2PAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK765R2-40B,118

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Mounting Type: Surface Mount
• Power - Max: 203W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 52nC @ 10V
• Vgs(th) (max) @ Id: 4V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 75A
• Drain To Source Voltage (vdss): 40V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 5.2 mOhm @ 25A, 10V
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0052 Ohm @ 10 V
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 143 A
• Power Dissipation: 203000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934057713118::BUK765R2-40B /T3::BUK765R2-40B /T3

NXP Semiconductors
5. Thermal characteristics
Table 5.
BUK765R2-40B_2
Product data sheet
Symbol
R
R
Fig 4.
th(j-mb)
th(j-a)
Z th(j-mb)
(K/W)
10 -1
10 -2
10 -3
1
Transient thermal impedance from junction to mounting base as a function of pulse duration
10 -6
Thermal characteristics
0.1
0.05
0.2
0.02
δ = 0.5
Parameter
thermal resistance from
junction to mounting
base
thermal resistance from
junction to ambient
single shot
10 -5
Conditions
see
minimum footprint; mounted on a
printed-circuit board
Figure 4
10 -4
Rev. 02 — 16 January 2009
10 -3
N-channel TrenchMOS standard level FET
10 -2
BUK765R2-40B
Min
-
-
10 -1
P
Typ
-
50
t p
T
t p (s)
© NXP B.V. 2009. All rights reserved.
δ =
Max
0.74
-
03nj25
t p
T
t
1
Unit
K/W
K/W
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