BUK765R2-40B,118 NXP Semiconductors, BUK765R2-40B,118 Datasheet - Page 4

MOSFET N-CH 40V 75A D2PAK

BUK765R2-40B,118

Manufacturer Part Number
BUK765R2-40B,118
Description
MOSFET N-CH 40V 75A D2PAK
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet

Specifications of BUK765R2-40B,118

Package / Case
D²Pak, TO-263 (2 leads + tab)
Mounting Type
Surface Mount
Power - Max
203W
Fet Type
MOSFET N-Channel, Metal Oxide
Gate Charge (qg) @ Vgs
52nC @ 10V
Vgs(th) (max) @ Id
4V @ 1mA
Current - Continuous Drain (id) @ 25° C
75A
Drain To Source Voltage (vdss)
40V
Fet Feature
Standard
Rds On (max) @ Id, Vgs
5.2 mOhm @ 25A, 10V
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0052 Ohm @ 10 V
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
143 A
Power Dissipation
203000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934057713118::BUK765R2-40B /T3::BUK765R2-40B /T3
NXP Semiconductors
BUK765R2-40B_2
Product data sheet
Fig 1.
Fig 3.
(A)
I D
(A)
I D
150
100
10 3
10 2
50
10
1
0
mounting base temperature
Continuous drain current as a function of
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
10 -1
0
Capped at 75 A due to package
50
100
Limit R DSon = V DS /I D
150
Capped at 75 A due to package
T mb (°C)
1
03nj26
200
Rev. 02 — 16 January 2009
Fig 2.
P
(%)
der
120
80
40
0
function of mounting base temperature
Normalized total power dissipation as a
0
N-channel TrenchMOS standard level FET
10
DC
50
BUK765R2-40B
100
V DS (V)
150
t p = 10 µs
100 µs
1 ms
10 ms
100 ms
© NXP B.V. 2009. All rights reserved.
T
mb
03nj24
03na19
(°C)
10 2
200
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