BUK765R2-40B,118 NXP Semiconductors, BUK765R2-40B,118 Datasheet - Page 3

• Manufacturer Part Number: BUK765R2-40B,118
• Description: MOSFET N-CH 40V 75A D2PAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK765R2-40B,118

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Mounting Type: Surface Mount
• Power - Max: 203W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 52nC @ 10V
• Vgs(th) (max) @ Id: 4V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 75A
• Drain To Source Voltage (vdss): 40V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 5.2 mOhm @ 25A, 10V
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0052 Ohm @ 10 V
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 143 A
• Power Dissipation: 203000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934057713118::BUK765R2-40B /T3::BUK765R2-40B /T3

NXP Semiconductors
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
BUK765R2-40B_2
Product data sheet
Symbol
V
V
V
I
I
P
T
T
Source-drain diode
I
I
Avalanche ruggedness
E
D
DM
S
SM
stg
j
DS
DGR
GS
tot
DS(AL)S
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
source current
peak source current
non-repetitive
drain-source avalanche
energy
[1]
[2]
Current is limited by power dissipation chip rating.
Continuous current is limited by package.
Conditions
T
R
T
T
T
T
T
T
T
t
I
T
p
D
j
mb
mb
mb
mb
mb
mb
mb
j(init)
GS
≤ 10 µs; pulsed; T
≥ 25 °C; T
= 75 A; V
= 25 °C; V
= 25 °C; V
= 100 °C; V
= 25 °C; t
= 25 °C; see
= 25 °C;
= 25 °C;
= 20 kΩ
= 25 °C; unclamped
Rev. 02 — 16 January 2009
sup
j
≤ 175 °C
p
GS
GS
≤ 40 V; R
≤ 10 µs; pulsed; see
GS
Figure 2
= 10 V; see
= 10 V; see
= 10 V; see
mb
= 25 °C
GS
= 50 Ω; V
Figure
Figure
Figure
Figure 3
N-channel TrenchMOS standard level FET
1; see
1; see
GS
1;
= 10 V;
Figure
Figure
BUK765R2-40B
3;
3;
[1]
[2]
[2]
[1]
[2]
Min
-
-
-20
-
-
-
-
-
-55
-55
-
-
-
-
© NXP B.V. 2009. All rights reserved.
Max
40
40
20
143
75
75
573
203
175
175
143
75
573
494
Unit
V
V
V
A
A
A
A
W
°C
°C
A
A
A
mJ
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