PH3330L,115 NXP Semiconductors, PH3330L,115 Datasheet - Page 11

• Manufacturer Part Number: PH3330L,115
• Description: MOSFET N-CH 30V 100A LFPAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PH3330L,115

• Package / Case: LFPak-4
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3.3 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 2.15V @ 1mA
• Gate Charge (qg) @ Vgs: 30.5nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 4840pF @ 12V
• Power - Max: 62.5W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0033 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 100 A
• Power Dissipation: 62500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934058817115; PH3330L T/R; PH3330L T/R

NXP Semiconductors
8. Revision history
Table 7.
PH3330L_2
Product data sheet
Document ID
PH3330L_2
Modifications:
PH3330L_1
Revision history
Release date
20081022
20060201
•
•
The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
Legal texts have been adapted to the new company name where appropriate.
Data sheet status
Product data sheet
Product data sheet
Rev. 02 — 22 October 2008
Change notice
-
-
N-channel TrenchMOS logic level FET
Supersedes
PH3330L_1
-
PH3330L
© NXP B.V. 2008. All rights reserved.
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