ph3330l NXP Semiconductors, ph3330l Datasheet
ph3330l
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ph3330l Summary of contents
Page 1
... PH3330L N-channel TrenchMOS logic level FET Rev. 01 — 1 February 2006 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. 1.2 Features Optimized for use in DC-to-DC converters Logic level compatible 1.3 Applications DC-to-DC converters Voltage regulators 1 ...
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... C; see Figure pulsed unclamped inductive load 0.15 ms starting Rev. 01 — 1 February 2006 PH3330L N-channel TrenchMOS logic level FET Min - - - Figure 2 and 3 - Figure 2 - Figure ...
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... N-channel TrenchMOS logic level FET 120 der 100 150 -------------------- - 100 % der function of mounting base temperature 100 100 (V) DS © Koninklijke Philips Electronics N.V. 2006. All rights reserved. PH3330L 03aa23 200 003aab259 ...
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... Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration PH3330L_1 Product data sheet Conditions Figure Rev. 01 — 1 February 2006 PH3330L N-channel TrenchMOS logic level FET Min Typ Max - - 2 003aab260 ...
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... MHz see Figure /dt = 100 Rev. 01 — 1 February 2006 PH3330L N-channel TrenchMOS logic level FET Min Typ Max and 10 1.3 1.7 2. 100 ...
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... drain current; typical values 2 a 1.6 1.2 0.8 0 DSon a = ----------------------------- - R DSon 25 C factor as a function of junction temperature © Koninklijke Philips Electronics N.V. 2006. All rights reserved. PH3330L 003aab262 3.4 3.6 3.8 4 100 I (A) D 003aab273 120 180 ...
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... Fig 10. Sub-threshold drain current as a function of gate-source voltage 003aab264 (nC) G Fig 12. Gate charge waveform definitions Rev. 01 — 1 February 2006 PH3330L N-channel TrenchMOS logic level FET 003aab271 min typ max 0 ...
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... Rev. 01 — 1 February 2006 N-channel TrenchMOS logic level FET MHz function of drain-source voltage; typical values 003aab267 10 V (V) GS © Koninklijke Philips Electronics N.V. 2006. All rights reserved. PH3330L 003aab266 C iss C oss C rss ( ...
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... Rev. 01 — 1 February 2006 N-channel TrenchMOS logic level FET detail (1) (1) ( 5.0 3.3 6.2 0.85 1.3 1.27 4.8 3.1 5.8 0.40 0.8 EUROPEAN PROJECTION © Koninklijke Philips Electronics N.V. 2006. All rights reserved. PH3330L SOT669 1.3 8 0.25 0.1 0.8 0 ISSUE DATE 03-09-15 04-10- ...
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... Revision history Document ID Release date PH3330L_1 20060201 PH3330L_1 Product data sheet Data sheet status Change notice Product data sheet - Rev. 01 — 1 February 2006 PH3330L N-channel TrenchMOS logic level FET Doc. number Supersedes - - © Koninklijke Philips Electronics N.V. 2006. All rights reserved ...
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... Notice — All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS — trademark of Koninklijke Philips Electronics N.V. Rev. 01 — 1 February 2006 PH3330L N-channel TrenchMOS logic level FET © Koninklijke Philips Electronics N.V. 2006. All rights reserved ...
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... No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Published in The Netherlands PH3330L Date of release: 1 February 2006 Document number: PH3330L_1 ...