BUK7611-55B,118 NXP Semiconductors, BUK7611-55B,118 Datasheet - Page 2

• Manufacturer Part Number: BUK7611-55B,118
• Description: MOSFET N-CH 55V 75A D2PAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7611-55B,118

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Mounting Type: Surface Mount
• Power - Max: 157W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 37nC @ 10V
• Vgs(th) (max) @ Id: 4V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 75A
• Drain To Source Voltage (vdss): 55V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 11 mOhm @ 25A, 10V
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.011 Ohm @ 10 V
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 84 A
• Power Dissipation: 157000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934057701118::BUK7611-55B /T3::BUK7611-55B /T3

NXP Semiconductors
2. Pinning information
Table 2.
[1]
3. Ordering information
Table 3.
BUK7611-55B
Product data sheet
Pin
1
2
3
mb
Type number
BUK7611-55B
It is not possible to make connection to pin 2 of the SOT404 package.
Symbol Description
G
D
S
D
Pinning information
Ordering information
gate
drain
source
mounting base; connected to
drain
Table 1.
[1]
Package
Name
D2PAK
Symbol
Avalanche ruggedness
E
Dynamic characteristics
Q
[1]
DS(AL)S
GD
Continuous current is limited by package.
Quick reference data
Parameter
non-repetitive
drain-source
avalanche energy
gate-drain charge V
Description
plastic single-ended surface-mounted package (D2PAK); 3 leads
(one lead cropped)
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 31 January 2011
Simplified outline
SOT404 (D2PAK)
Conditions
I
R
T
V
see
D
…continued
j(init)
GS
DS
GS
= 75 A; V
Figure 13
= 10 V; I
= 44 V; T
= 50 Ω; V
= 25 °C; unclamped
1
mb
2
3
sup
D
j
GS
= 25 °C;
= 25 A;
≤ 55 V;
N-channel TrenchMOS standard level FET
= 10 V;
Graphic symbol
BUK7611-55B
mbb076
G
Min
-
-
© NXP B.V. 2011. All rights reserved.
D
S
Typ
-
12
Version
SOT404
Max Unit
173
-
2 of 14
mJ
nC