BUK7611-55B,118 NXP Semiconductors, BUK7611-55B,118 Datasheet - Page 11

• Manufacturer Part Number: BUK7611-55B,118
• Description: MOSFET N-CH 55V 75A D2PAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7611-55B,118

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Mounting Type: Surface Mount
• Power - Max: 157W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 37nC @ 10V
• Vgs(th) (max) @ Id: 4V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 75A
• Drain To Source Voltage (vdss): 55V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 11 mOhm @ 25A, 10V
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.011 Ohm @ 10 V
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 84 A
• Power Dissipation: 157000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934057701118::BUK7611-55B /T3::BUK7611-55B /T3

NXP Semiconductors
8. Revision history
Table 7.
BUK7611-55B
Product data sheet
Document ID
BUK7611-55B v.3
Modifications:
BUK75_76_7E11_55B-02
(9397 750 12053)
Revision history
Release date
20110131
20031111
•
•
•
The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
Legal texts have been adapted to the new company name where appropriate.
Type number BUK7611-55B separated from data sheet BUK75_76_7E11_55B-02.
All information provided in this document is subject to legal disclaimers.
Data sheet status
Product data sheet
Product data
Rev. 3 — 31 January 2011
Change notice
-
-
N-channel TrenchMOS standard level FET
BUK7611-55B
BUK75_76_7E11_55B-02
Supersedes
BUK75_76_7E11_55B-01
© NXP B.V. 2011. All rights reserved.
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