PHB47NQ10T,118 NXP Semiconductors, PHB47NQ10T,118 Datasheet - Page 9

• Manufacturer Part Number: PHB47NQ10T,118
• Description: MOSFET N-CH 100V 47A D2PAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PHB47NQ10T,118

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Mounting Type: Surface Mount
• Power - Max: 166W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 66nC @ 10V
• Vgs(th) (max) @ Id: 4V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 47A
• Drain To Source Voltage (vdss): 100V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 28 mOhm @ 25A, 10V
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.028 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 47 A
• Power Dissipation: 166000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934056745118::PHB47NQ10T /T3::PHB47NQ10T /T3

NXP Semiconductors
7. Package outline
Fig 16. Package outline SOT404 (D2PAK)
PHB47NQ10T_2
Product data sheet
Plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped)
DIMENSIONS (mm are the original dimensions)
UNIT
mm
VERSION
OUTLINE
SOT404
4.50
4.10
A
H D
1.40
1.27
A 1
D
D 1
0.85
0.60
b
IEC
0.64
0.46
c
max.
1
D
11
e
All information provided in this document is subject to legal disclaimers.
JEDEC
E
1.60
1.20
D 1
2
e
REFERENCES
Rev. 02 — 25 February 2010
10.30
9.70
E
3
0
b
2.54
e
JEITA
scale
2.5
2.90
2.10
L p
5 mm
15.80
14.80
H D
N-channel TrenchMOS standard level FET
mounting
2.60
2.20
Q
base
L p
A 1
Q
PROJECTION
c
EUROPEAN
A
PHB47NQ10T
© NXP B.V. 2010. All rights reserved.
ISSUE DATE
05-02-11
06-03-16
SOT404
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