PHB47NQ10T,118 NXP Semiconductors, PHB47NQ10T,118 Datasheet - Page 4

• Manufacturer Part Number: PHB47NQ10T,118
• Description: MOSFET N-CH 100V 47A D2PAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PHB47NQ10T,118

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Mounting Type: Surface Mount
• Power - Max: 166W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 66nC @ 10V
• Vgs(th) (max) @ Id: 4V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 47A
• Drain To Source Voltage (vdss): 100V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 28 mOhm @ 25A, 10V
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.028 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 47 A
• Power Dissipation: 166000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934056745118::PHB47NQ10T /T3::PHB47NQ10T /T3

NXP Semiconductors
5. Thermal characteristics
Table 5.
PHB47NQ10T_2
Product data sheet
Symbol
R
R
Fig 3.
Fig 5.
th(j-mb)
th(j-a)
P
(%)
der
120
80
40
0
function of mounting base temperature
Normalized total power dissipation as a
Transient thermal impedance from junction to mounting base as a function of pulse duration
0
Thermal characteristics
Parameter
thermal resistance from
junction to mounting
base
thermal resistance from
junction to ambient
Z
th (j-mb)
(K/W)
50
10
10
10
−2
1
−3
−1
10
−7
100
0.05
0.02
0.5
0.2
0.1
δ =
10
−6
Conditions
see
mounted on printed-circuit board;
minimum footprint
150
Figure 5
All information provided in this document is subject to legal disclaimers.
Single pulse
T
10
mb
−5
03aa16
(°C)
Rev. 02 — 25 February 2010
200
10
−4
10
−3
Fig 4.
I
(A)
AS
10
10
10
2
1
−2
as a function of pulse duration
10
Non-repetitive avalanche ruggedness current
−3
N-channel TrenchMOS standard level FET
T
j
10
P
prior to avalanche = 150 °C
−1
10
−2
t
p
T
1
Min
-
-
δ =
003aaa099
10
PHB47NQ10T
t
p
−1
(s)
t
T
p
t
10
Typ
-
50
1
© NXP B.V. 2010. All rights reserved.
t
25 °C
p
003aaa098
Max
0.9
-
(ms)
10
Unit
K/W
K/W
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