PHB47NQ10T,118 NXP Semiconductors, PHB47NQ10T,118 Datasheet
PHB47NQ10T,118
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PHB47NQ10T,118 Summary of contents
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PHB47NQ10T N-channel TrenchMOS standard level FET Rev. 02 — 25 February 2010 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product is designed and qualified for ...
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... NXP Semiconductors 2. Pinning information Table 2. Pinning information Pin Symbol Description 1 G gate 2 D drain 3 S source mb D mounting base; connected to drain [ not possible to make a connection to pin 2. 3. Ordering information Table 3. Ordering information Type number Package Name PHB47NQ10T D2PAK PHB47NQ10T_2 Product data sheet ...
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... NXP Semiconductors 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter V drain-source voltage DS V drain-gate voltage DGR V gate-source voltage GS I drain current D I peak drain current DM P total power dissipation tot T storage temperature stg ...
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... NXP Semiconductors 120 P der (%) 100 Fig 3. Normalized total power dissipation as a function of mounting base temperature 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter R thermal resistance from th(j-mb) junction to mounting base R thermal resistance from th(j-a) junction to ambient 1 δ (j-mb) (K/W) 0.2 −1 10 0.1 ...
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... NXP Semiconductors 6. Characteristics Table 6. Characteristics Symbol Parameter Static characteristics V drain-source (BR)DSS breakdown voltage V gate-source threshold GS(th) voltage I drain leakage current DSS I gate leakage current GSS R drain-source on-state DSon resistance Dynamic characteristics Q total gate charge G(tot) Q gate-source charge GS Q gate-drain charge GD C input capacitance ...
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... NXP Semiconductors 180 160 140 120 100 Fig 6. Output characteristics: drain current as a function of drain-source voltage; typical values − (A) − typ −3 10 −4 10 −5 10 − Fig 8. Sub-threshold drain current as a function of gate-source voltage PHB47NQ10T_2 Product data sheet 003aaa100 8.0 V (A) 7 ...
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... NXP Semiconductors 4 GS(th) (V) 3.5 3 2.5 2 1.5 1 0.5 0 −60 − Fig 10. Gate-source threshold voltage as a function of junction temperature 2.0 1.8 a 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 −60 - Fig 12. Normalized drain-source on-state resistance factor as a function of junction temperature PHB47NQ10T_2 Product data sheet ...
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... NXP Semiconductors iss oss C rss C (nF) iss 4 C oss 3 C rss −2 − Fig 14. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values PHB47NQ10T_2 Product data sheet 003aaa105 100 (V) DS Fig 15. Source current as a function of source-drain voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 02 — ...
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... NXP Semiconductors 7. Package outline Plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped DIMENSIONS (mm are the original dimensions UNIT 4.50 1.40 0.85 0.64 mm 4.10 1.27 0.60 0.46 OUTLINE VERSION IEC SOT404 Fig 16. Package outline SOT404 (D2PAK) PHB47NQ10T_2 Product data sheet 2.5 ...
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... Document ID Release date PHB47NQ10T_2 20100225 • Modifications: The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. PHP_PHB_47NQ10T-01 20010516 (9397 750 08243) PHB47NQ10T_2 ...
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... NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. ...
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... NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ ...
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... NXP Semiconductors 11. Contents 1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 1.1 General description . . . . . . . . . . . . . . . . . . . . . .1 1.2 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 4 Limiting values Thermal characteristics . . . . . . . . . . . . . . . . . . .4 6 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .5 7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . .9 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . .10 9 Legal information 9.1 Data sheet status ...