BUK9620-100B,118 NXP Semiconductors, BUK9620-100B,118 Datasheet - Page 8

• Manufacturer Part Number: BUK9620-100B,118
• Description: MOSFET N-CH TRENCH 100V TO263
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9620-100B,118

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Mounting Type: Surface Mount
• Power - Max: 203W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 53.4nC @ 5V
• Vgs(th) (max) @ Id: 2V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 63A
• Drain To Source Voltage (vdss): 100V
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 18.5 mOhm @ 25A, 10V
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0185 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 63 A
• Power Dissipation: 203000 mW
• Maximum Operating Temperature: + 175 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934062452118

NXP Semiconductors
BUK9620-100B_2
Product data sheet
Fig 13. Source current as a function of source drain
Fig 15. Gate-source voltage as a function of turn-on
(A)
120
I
V
(V)
S
90
60
30
GS
5
4
3
2
1
0
0
voltage; typical values.
gate charge; typical values.
0
0
T
j
= 25 ° C
V
150 °C
DS
0.5
= 14V
20
1
T
j
= 25 °C
40
V
DS
1.5
= 80V
Q
003a a c778
003a a c777
V
G
S D
(nC)
(V)
60
2
Rev. 02 — 6 May 2009
Fig 14. Gate charge waveform definitions
Fig 16. Input, output and reverse transfer capacitances
(pF)
10
10
10
C
4
3
2
10
as a function of drain-source voltage; typical
values
V
-1
V
V
V
GS(pl)
DS
GS(th)
GS
N-channel TrenchMOS logic level FET
Q
GS1
1
I
Q
D
GS
BUK9620-100B
Q
GS2
Q
G(tot)
Q
GD
10
© NXP B.V. 2009. All rights reserved.
V
DS
003aaa508
003a a c775
C
C
C
(V)
rs s
os s
is s
10
2
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