BUK9620-100B,118 NXP Semiconductors, BUK9620-100B,118 Datasheet - Page 2

• Manufacturer Part Number: BUK9620-100B,118
• Description: MOSFET N-CH TRENCH 100V TO263
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9620-100B,118

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Mounting Type: Surface Mount
• Power - Max: 203W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 53.4nC @ 5V
• Vgs(th) (max) @ Id: 2V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 63A
• Drain To Source Voltage (vdss): 100V
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 18.5 mOhm @ 25A, 10V
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0185 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 63 A
• Power Dissipation: 203000 mW
• Maximum Operating Temperature: + 175 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934062452118

NXP Semiconductors
2. Pinning information
Table 2.
3. Ordering information
Table 3.
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
BUK9620-100B_2
Product data sheet
Pin
1
2
3
mb
Type number
BUK9620-100B
Symbol
V
V
V
I
I
P
T
T
Source-drain diode
I
I
Avalanche ruggedness
E
D
DM
S
SM
stg
j
DS
DGR
GS
tot
DS(AL)S
Symbol
G
D
S
D
Pinning information
Ordering information
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
source current
peak source current
non-repetitive
drain-source avalanche
energy
Package
Name
D2PAK
Description
gate
drain
source
mounting base; connected to
drain
Description
plastic single-ended surface-mounted package (D2PAK); 3 leads (one
lead cropped)
Conditions
T
R
T
T
T
T
T
t
I
T
p
D
j
mb
mb
mb
mb
mb
j(init)
GS
≤ 10 µs; pulsed; T
≥ 25 °C; T
= 63 A; V
= 25 °C; V
= 100 °C; V
= 25 °C; t
= 25 °C; see
= 25 °C
= 20 kΩ
= 25 °C; unclamped
sup
j
≤ 175 °C
Rev. 02 — 6 May 2009
p
GS
≤ 100 V; R
≤ 10 µs; pulsed; see
GS
Figure 2
= 5 V; see
= 5 V; see
mb
= 25 °C
Simplified outline
GS
Figure
= 50 Ω; V
Figure 1
(D2PAK)
SOT404
1; see
1
Figure 3
mb
GS
2
3
N-channel TrenchMOS logic level FET
= 5 V;
Figure 3
BUK9620-100B
Graphic symbol
Min
-
-
-15
-
-
-
-
-55
-55
-
-
-
G
mbb076
© NXP B.V. 2009. All rights reserved.
Max
100
100
15
63
45
253
203
175
175
63
253
222
D
Version
SOT404
S
Unit
V
V
V
A
A
A
W
°C
°C
A
A
mJ
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