BUK9620-100B,118 NXP Semiconductors, BUK9620-100B,118 Datasheet - Page 3

• Manufacturer Part Number: BUK9620-100B,118
• Description: MOSFET N-CH TRENCH 100V TO263
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9620-100B,118

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Mounting Type: Surface Mount
• Power - Max: 203W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 53.4nC @ 5V
• Vgs(th) (max) @ Id: 2V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 63A
• Drain To Source Voltage (vdss): 100V
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 18.5 mOhm @ 25A, 10V
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0185 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 63 A
• Power Dissipation: 203000 mW
• Maximum Operating Temperature: + 175 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934062452118

NXP Semiconductors
BUK9620-100B_2
Product data sheet
Fig 1.
Fig 3.
(%)
I
10
der
(A)
10
10
120
I
D
10
80
40
-1
3
2
1
0
function of mounting base temperature
Normalized continuous drain current as a
Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
0
1
50
Limit R
DSon
100
= V
DS
/ I
D
150
DC
T
mb
10
03aa24
(°C)
200
Rev. 02 — 6 May 2009
Fig 2.
P
(%)
der
120
80
40
0
function of mounting base temperature
Normalized total power dissipation as a
0
10
N-channel TrenchMOS logic level FET
2
t
100 μs
1ms
10 ms
100 ms
p
= 10 μs
50
BUK9620-100B
100
V
DS
(V)
150
© NXP B.V. 2009. All rights reserved.
T
003aac769
mb
03na19
(°C)
10
200
3
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