BUK9E08-55B,127 NXP Semiconductors, BUK9E08-55B,127 Datasheet - Page 5

• Manufacturer Part Number: BUK9E08-55B,127
• Description: MOSFET N-CH TRENCH 55V I2PAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9E08-55B,127

• Package / Case: I²Pak, TO-220AB (3 straight leads + tab)
• Mounting Type: Through Hole
• Power - Max: 203W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 45nC @ 5V
• Vgs(th) (max) @ Id: 2V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 75A
• Drain To Source Voltage (vdss): 55V
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 7 mOhm @ 25A, 10V
• Gate Charge Qg: 45 nC
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 8.4 mOhms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: 15 V
• Continuous Drain Current: 110 A
• Power Dissipation: 203 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934057717127

NXP Semiconductors
5. Thermal characteristics
Table 5.
BUK9E08-55B
Product data sheet
Symbol
R
R
Fig 4.
th(j-mb)
th(j-a)
Transient thermal impedance from junction to ambient as a function of pulse duration
Thermal characteristics
Parameter
thermal resistance
from junction to
mounting base
thermal resistance
from junction to
ambient
Z
(K/W)
th(j-mb)
10
10
10
−1
−2
−3
1
10
−6
δ = 0.5
single shot
0.05
0.02
0.2
0.1
10
−5
Conditions
see
vertical in still air
All information provided in this document is subject to legal disclaimers.
Figure 4
10
−4
Rev. 03 — 31 May 2010
10
−3
10
−2
N-channel TrenchMOS logic level FET
P
10
t
−1
p
T
t
BUK9E08-55B
p
Min
-
-
(s)
δ =
03nn56
t
T
t
p
1
Typ
-
60
© NXP B.V. 2010. All rights reserved.
Max
0.74
-
Unit
K/W
K/W
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