BUK9E08-55B,127 NXP Semiconductors, BUK9E08-55B,127 Datasheet - Page 2

• Manufacturer Part Number: BUK9E08-55B,127
• Description: MOSFET N-CH TRENCH 55V I2PAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9E08-55B,127

• Package / Case: I²Pak, TO-220AB (3 straight leads + tab)
• Mounting Type: Through Hole
• Power - Max: 203W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 45nC @ 5V
• Vgs(th) (max) @ Id: 2V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 75A
• Drain To Source Voltage (vdss): 55V
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 7 mOhm @ 25A, 10V
• Gate Charge Qg: 45 nC
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 8.4 mOhms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: 15 V
• Continuous Drain Current: 110 A
• Power Dissipation: 203 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934057717127

NXP Semiconductors
2. Pinning information
Table 2.
3. Ordering information
Table 3.
BUK9E08-55B
Product data sheet
Pin
1
2
3
mb
Type number
BUK9E08-55B
Symbol Description
G
D
S
D
Pinning information
Ordering information
gate
drain
source
mounting base; connected to
drain
Table 1.
[1]
Package
Name
I2PAK
Symbol
Avalanche ruggedness
E
Dynamic characteristics
Q
DS(AL)S
GD
Continuous current is limited by package.
Quick reference data
Parameter
non-repetitive
drain-source
avalanche energy
gate-drain charge V
Description
plastic single-ended package (I2PAK); TO-262
All information provided in this document is subject to legal disclaimers.
Rev. 03 — 31 May 2010
Simplified outline
SOT226 (I2PAK)
Conditions
I
R
T
V
see
D
…continued
j(init)
GS
DS
GS
= 75 A; V
Figure 13
= 5 V; I
= 44 V; T
= 50 Ω; V
1
= 25 °C; unclamped
mb
2
3
D
sup
= 25 A;
j
GS
= 25 °C;
≤ 55 V;
= 5 V;
N-channel TrenchMOS logic level FET
Graphic symbol
BUK9E08-55B
mbb076
G
Min
-
-
© NXP B.V. 2010. All rights reserved.
D
S
Typ
-
16
SOT226
Version
Max Unit
352
-
2 of 14
mJ
nC