BUK9E08-55B,127 NXP Semiconductors, BUK9E08-55B,127 Datasheet - Page 11

• Manufacturer Part Number: BUK9E08-55B,127
• Description: MOSFET N-CH TRENCH 55V I2PAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9E08-55B,127

• Package / Case: I²Pak, TO-220AB (3 straight leads + tab)
• Mounting Type: Through Hole
• Power - Max: 203W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 45nC @ 5V
• Vgs(th) (max) @ Id: 2V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 75A
• Drain To Source Voltage (vdss): 55V
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 7 mOhm @ 25A, 10V
• Gate Charge Qg: 45 nC
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 8.4 mOhms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: 15 V
• Continuous Drain Current: 110 A
• Power Dissipation: 203 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934057717127

NXP Semiconductors
8. Revision history
Table 7.
BUK9E08-55B
Product data sheet
Document ID
BUK9E08-55B v.3
Modifications:
BUK95_96_9E08_55B-02
(9397 750 12052)
Revision history
Release date
20100531
20031013
•
•
•
The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
Legal texts have been adapted to the new company name where appropriate.
Type number BUK9E08-55B separated from data sheet BUK95_96_9E08_55B-02.
All information provided in this document is subject to legal disclaimers.
Data sheet status
Product data sheet
Product data sheet
Rev. 03 — 31 May 2010
Change notice
-
-
N-channel TrenchMOS logic level FET
BUK9E08-55B
Supersedes
BUK95_96_9E08_55B-02
-
© NXP B.V. 2010. All rights reserved.
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