PH4830L,115 NXP Semiconductors, PH4830L,115 Datasheet - Page 7

• Manufacturer Part Number: PH4830L,115
• Description: MOSFET N-CH 30V 84A LFPAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PH4830L,115

• Package / Case: LFPak-4
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4.8 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 84A
• Vgs(th) (max) @ Id: 2.15V @ 1mA
• Gate Charge (qg) @ Vgs: 22.9nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 2786pF @ 12V
• Power - Max: 62.5W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 4.8 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 84 A
• Power Dissipation: 62.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934061157115; PH4830L T/R; PH4830L T/R

NXP Semiconductors
PH4830L_1
Product data sheet
Fig 9. Gate-source threshold voltage as a function of
Fig 11. Gate-source voltage as a function of gate
V
V
(V)
GS(th)
GS
(V)
10
1.5
0.5
8
6
4
2
0
3
2
1
0
I
junction temperature
I
charge; typical values
0
-60
D
D
V
I
T
D
= 1 mA; V
= 20 A; V
DS
j
= 25 C
= 20 A
= 12 V
12.5
DS
0
DS
= 12 V
= V
GS
max
typ
min
25
60
37.5
120
Q
003aab717
G
003aab272
T
j
(nC)
( C)
Rev. 01 — 6 September 2007
50
180
Fig 10. Sub-threshold drain current as a function of
Fig 12. Gate charge waveform definitions
(A)
I
10
10
10
10
10
10
D
1
2
3
4
5
6
T
gate-source voltage
0
j
V
= 25 C; V
V
V
V
GS(pl)
DS
GS(th)
GS
N-channel TrenchMOS logic level FET
Q
DS
GS1
= 5 V
1
I
Q
D
min
GS
Q
GS2
Q
typ
G(tot)
Q
GD
2
max
PH4830L
© NXP B.V. 2007. All rights reserved.
V
GS
003aaa508
003aab938
(V)
3
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