PH4830L,115 NXP Semiconductors, PH4830L,115 Datasheet - Page 3

• Manufacturer Part Number: PH4830L,115
• Description: MOSFET N-CH 30V 84A LFPAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PH4830L,115

• Package / Case: LFPak-4
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4.8 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 84A
• Vgs(th) (max) @ Id: 2.15V @ 1mA
• Gate Charge (qg) @ Vgs: 22.9nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 2786pF @ 12V
• Power - Max: 62.5W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 4.8 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 84 A
• Power Dissipation: 62.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934061157115; PH4830L T/R; PH4830L T/R

NXP Semiconductors
PH4830L_1
Product data sheet
Fig 1. Normalized total power dissipation as a
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
P
(%)
(A)
I
10
der
D
120
10
10
80
40
10
0
1
3
2
1
10
function of mounting base temperature
T
P
0
mb
der
1
= 25 C; I
=
----------------------- -
P
tot 25 C
50
P
tot
DM
is single pulse
100 %
100
Limit R
DSon
150
= V
T
003aab937
mb
1
DS
( C)
/ I
Rev. 01 — 6 September 2007
D
200
Fig 2. Normalized continuous drain current as a
DC
(%)
I
der
120
80
40
0
function of mounting base temperature
I
0
der
=
10
------------------- -
I
N-channel TrenchMOS logic level FET
D 25 C
I
50
D
100 %
100
V
DS
t
100 s
1 ms
10 ms
100 ms
p
(V)
= 100 s
150
PH4830L
© NXP B.V. 2007. All rights reserved.
003aab555
T
003aab773
j
( C)
200
10
2
3 of 12