BUK7575-100A,127 NXP Semiconductors, BUK7575-100A,127 Datasheet - Page 9

• Manufacturer Part Number: BUK7575-100A,127
• Description: MOSFET N-CH 100V 23A TO220AB
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7575-100A,127

• Package / Case: TO-220AB-3
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 75 mOhm @ 13A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 23A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Input Capacitance (ciss) @ Vds: 1210pF @ 25V
• Power - Max: 99W
• Mounting Type: Through Hole
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.075 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 23 A
• Power Dissipation: 99000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934056483127; BUK7575-100A; BUK7575-100A

NXP Semiconductors
BUK7575-100A_2
Product data sheet
Fig 13. Normalized drain-source on-state resistance
Fig 15. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values
a
3
2
1
0
-60
factor as a function of junction temperature
0
60
(pF)
C
2000
1800
1600
1400
1200
1000
800
600
400
200
120
0
10
−2
C
C
C
03aa29
T
oss
rss
iss
j
( ° C)
180
10
Rev. 02 — 30 July 2009
−1
1
Fig 14. Reverse diode current as a function of reverse
(A)
I
S
45
40
35
30
25
20
15
10
5
0
10
0.0
diode voltage; typical values
N-channel TrenchMOS standard level FET
V
DS
03nb33
(V)
0.2
10
2
T
j
0.4
= 175 °C
BUK7575-100A
0.6
0.8
T
© NXP B.V. 2009. All rights reserved.
j
= 25 °C
1.0
V
SD
03nb26
(V)
1.2
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