BUK7575-100A,127 NXP Semiconductors, BUK7575-100A,127 Datasheet - Page 8

• Manufacturer Part Number: BUK7575-100A,127
• Description: MOSFET N-CH 100V 23A TO220AB
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7575-100A,127

• Package / Case: TO-220AB-3
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 75 mOhm @ 13A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 23A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Input Capacitance (ciss) @ Vds: 1210pF @ 25V
• Power - Max: 99W
• Mounting Type: Through Hole
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.075 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 23 A
• Power Dissipation: 99000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934056483127; BUK7575-100A; BUK7575-100A

NXP Semiconductors
BUK7575-100A_2
Product data sheet
Fig 9.
Fig 11. Gate-source threshold voltage as a function of
V
(A)
I
GS(th)
D
(V)
35
30
25
20
15
10
5
0
5
4
3
2
1
0
−60
function of gate-source voltage; typical values
junction temperature
Transfer characteristics: drain current as a
0
2
0
T
j
= 175 °C
60
4
max
min
typ
T
j
= 25 °C
120
6
V
T
GS
j
(°C)
03nb29
03aa32
(V)
180
8
Rev. 02 — 30 July 2009
Fig 10. Gate-source voltage as a function of turn-on
Fig 12. Drain-source on-state resistance as a function
R
(mΩ)
V
(V)
DSon
GS
120
100
80
60
40
10
9
8
7
6
5
4
3
2
1
0
gate charge; typical values
of drain current; typical values
0
0
N-channel TrenchMOS standard level FET
V
GS
(V)= 5.5
10
V
DS
10
= 14 V
20
BUK7575-100A
6
30
6.5
20
7
V
DS
8
Q
© NXP B.V. 2009. All rights reserved.
40
G
= 80 V
10
(nC)
I
D
03nb27
03nb32
(A)
30
50
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