BUK7575-100A,127 NXP Semiconductors, BUK7575-100A,127 Datasheet - Page 7

• Manufacturer Part Number: BUK7575-100A,127
• Description: MOSFET N-CH 100V 23A TO220AB
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7575-100A,127

• Package / Case: TO-220AB-3
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 75 mOhm @ 13A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 23A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Input Capacitance (ciss) @ Vds: 1210pF @ 25V
• Power - Max: 99W
• Mounting Type: Through Hole
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.075 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 23 A
• Power Dissipation: 99000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934056483127; BUK7575-100A; BUK7575-100A

NXP Semiconductors
BUK7575-100A_2
Product data sheet
Fig 5.
Fig 7.
(A)
I
D
(A)
I
10
10
10
10
10
10
D
−1
−2
−3
−4
−5
−6
60
50
40
30
20
10
0
function of drain-source voltage; typical values
gate-source voltage
Output characteristics: drain current as a
Sub-threshold drain current as a function of
0
0
2
V
2
GS
4
min
(V) =
8
typ
6
4
9
max
V
GS
8
10
V
DS
(V)
03nb31
03aa35
(V)
20
7.5
6.5
5.5
4.5
10
6
Rev. 02 — 30 July 2009
Fig 6.
Fig 8.
R
(m Ω )
DSon
g
(S)
fs
90
85
80
75
70
65
60
55
50
20
15
10
5
0
of gate-source voltage; typical values
drain current; typical values
Drain-source on-state resistance as a function
Forward transconductance as a function of
5
0
N-channel TrenchMOS standard level FET
10
10
BUK7575-100A
20
15
30
V
© NXP B.V. 2009. All rights reserved.
GS
I
D
(V)
03nb30
03nb28
(A)
20
40
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