PHK31NQ03LT,518 NXP Semiconductors, PHK31NQ03LT,518 Datasheet - Page 10

• Manufacturer Part Number: PHK31NQ03LT,518
• Description: MOSFET N-CH 30V 30.4A 8-SOIC
• Manufacturer: NXP Semiconductors

Specifications of PHK31NQ03LT,518

• Package / Case: 8-SOIC (3.9mm Width)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4.4 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 30.4A
• Vgs(th) (max) @ Id: 2.15V @ 1mA
• Gate Charge (qg) @ Vgs: 33nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 4235pF @ 12V
• Power - Max: 6.9W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0044 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 30.4 A
• Power Dissipation: 6900 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934058879518; PHK31NQ03LT /T3; PHK31NQ03LT /T3

NXP Semiconductors
8. Revision history
Table 7.
PHK31NQ03LT
Product data sheet
Document ID
PHK31NQ03LT v.3
Modifications:
PHK31NQ03LT v.2
Revision history
Release date
20110311
20101220
•
Various changes to content.
All information provided in this document is subject to legal disclaimers.
Data sheet status
Product data sheet
Product data sheet
Rev. 3 — 11 March 2011
Change notice
-
-
N-channel TrenchMOS logic level FET
PHK31NQ03LT
Supersedes
PHK31NQ03LT v.2
PHK31NQ03LT v.1
© NXP B.V. 2011. All rights reserved.
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