BUK7219-55A,118 NXP Semiconductors, BUK7219-55A,118 Datasheet - Page 8

• Manufacturer Part Number: BUK7219-55A,118
• Description: MOSFET N-CH 55V 55A DPAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7219-55A,118

• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 19 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 55A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Input Capacitance (ciss) @ Vds: 2108pF @ 25V
• Power - Max: 114W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.019 Ohm @ 10 V
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 55 A
• Power Dissipation: 114000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934056242118; BUK7219-55A /T3; BUK7219-55A /T3

Philips Semiconductors
9397 750 07575
Product specification
Fig 13. Transfer characteristics; typical values.
V
DS
= 25 V
(A)
I D
100
90
80
70
60
50
40
30
20
10
0
0
2
4
Fig 15. Reverse diode current; typical values.
T j = 25 o C
V
6
GS
= 0 V
I S
(A)
T j = 175 o C
100
8
90
80
70
60
50
40
30
20
10
V GS (V)
0
0.0
03na31
10
0.2
Rev. 01 — 02 October 2000
0.4
T j = 175 o C
0.6
0.8
Fig 14. Turn-on gate charge characteristics; typical
1.0
T j = 25 o C
T
j
= 25 C; I
V GS (V)
1.2
values.
1.4
10
V SD (V)
03na32
9
8
7
6
5
4
3
2
1
0
0
D
1.6
= 25 A
10
TrenchMOS™ standard level FET
V DS = 14V
20
BUK7219-55A
30
© Philips Electronics N.V. 2000. All rights reserved.
V DS = 44V
40
50
Q G (nC)
03na33
60
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