BUK7219-55A,118 NXP Semiconductors, BUK7219-55A,118 Datasheet - Page 6

• Manufacturer Part Number: BUK7219-55A,118
• Description: MOSFET N-CH 55V 55A DPAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7219-55A,118

• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 19 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 55A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Input Capacitance (ciss) @ Vds: 2108pF @ 25V
• Power - Max: 114W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.019 Ohm @ 10 V
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 55 A
• Power Dissipation: 114000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934056242118; BUK7219-55A /T3; BUK7219-55A /T3

Table 5:
T
Philips Semiconductors
9397 750 07575
Product specification
Symbol
Source-drain diode
V
t
Q
rr
j
Fig 5. Output characteristics: drain current as a
Fig 7. Drain-source on-state resistance as a function
SD
r
= 25 C unless otherwise specified
T
T
j
j
= 25 C
= 25 C
(mOhms)
function of drain-source voltage; typical values.
of drain current; typical values.
R DSon
Characteristics
250
200
150
100
I D
(A)
50
Parameter
source-drain (diode forward)
voltage
reverse recovery time
recovered charge
0
0
50
45
40
35
30
25
20
15
10
0
V GS (V)= 6
20
2
40
60
…continued
4
6.5
80 100 120 140 160 180 200
7
6
8
8
V GS = 20
9
V DS (V)
Conditions
I
Figure 15
I
V
S
S
03na36
GS
10
= 25 A; V
= 25 A; dI
03na37
10
I D (A)
= 10 V; V
12
16
10
4.5
9
6
8
7
Rev. 01 — 02 October 2000
GS
S
/dt = 100 A/ s
= 0 V;
DS
= 30 V
Fig 6. On-state resistance: typical values.
Fig 8. Normalized drain source on-state resistance
(mOhms)
T
R DSon
j
a
= 25 C; I
=
factor as a function of junction temperature.
a
--------------------------- -
R
40
35
30
25
20
15
10
2.2
1.8
1.6
1.4
1.2
0.8
0.6
0.4
0.2
5
0
DSon 25 C
2
1
0
R
4
-60
DSon
D
Min
= 25 A
6
-20
TrenchMOS™ standard level FET
8
20
10
BUK7219-55A
Typ
0.85
48
106
12
60
© Philips Electronics N.V. 2000. All rights reserved.
14
100
16
140
Max
1.2
T j (
V GS (V)
18
03na34
03aa28
o
C)
180
20
Unit
V
ns
nC
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