PHB66NQ03LT,118 NXP Semiconductors, PHB66NQ03LT,118 Datasheet - Page 7

MOSFET N-CH 25V 66A SOT404

PHB66NQ03LT,118

Manufacturer Part Number
PHB66NQ03LT,118
Description
MOSFET N-CH 25V 66A SOT404
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet

Specifications of PHB66NQ03LT,118

Package / Case
D²Pak, TO-263 (2 leads + tab)
Mounting Type
Surface Mount
Power - Max
93W
Fet Type
MOSFET N-Channel, Metal Oxide
Gate Charge (qg) @ Vgs
12nC @ 5V
Vgs(th) (max) @ Id
2V @ 1mA
Current - Continuous Drain (id) @ 25° C
66A
Drain To Source Voltage (vdss)
25V
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
10.5 mOhm @ 25A, 10V
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0105 Ohm @ 10 V
Drain-source Breakdown Voltage
25 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
66 A
Power Dissipation
93000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934056840118::PHB66NQ03LT /T3::PHB66NQ03LT /T3
NXP Semiconductors
PHB66NQ03LT_7
Product data sheet
Fig 5.
Fig 7.
V
(A)
GS(th)
(V)
I
D
2.5
1.5
0.5
80
60
40
20
0
2
1
0
-60
function of drain-source voltage; typical values
junction temperature
Output characteristics: drain current as a
Gate-source threshold voltage as a function of
0
T
j
= 25 ° C
0.5
0
10 V
6 V
60
5 V
1
max
typ
min
120
1.5
V
GS
T
03ag20
03aa33
V
j
DS
( ° C)
4.5 V
3.5 V
= 3 V
4 V
(V)
Rev. 07 — 30 January 2009
180
2
Fig 6.
Fig 8.
(A)
(A)
10
I
10
10
10
10
10
I
D
D
80
60
40
20
-1
-2
-3
-4
-5
-6
0
function of gate-source voltage; typical values
gate-source voltage
Transfer characteristics: drain current as a
Sub-threshold drain current as a function of
0
0
V
DS
> I
N-channel TrenchMOS logic level FET
D
1
x R
DSon
1
min
2
175 ° C
PHB66NQ03LT
typ
3
T
2
j
= 25 ° C
max
© NXP B.V. 2009. All rights reserved.
V
4
GS
03ag22
03aa36
V
(V)
GS
(V)
3
5
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