PHB66NQ03LT,118 NXP Semiconductors, PHB66NQ03LT,118 Datasheet - Page 3

• Manufacturer Part Number: PHB66NQ03LT,118
• Description: MOSFET N-CH 25V 66A SOT404
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PHB66NQ03LT,118

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Mounting Type: Surface Mount
• Power - Max: 93W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 12nC @ 5V
• Vgs(th) (max) @ Id: 2V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 66A
• Drain To Source Voltage (vdss): 25V
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 10.5 mOhm @ 25A, 10V
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0105 Ohm @ 10 V
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 66 A
• Power Dissipation: 93000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934056840118::PHB66NQ03LT /T3::PHB66NQ03LT /T3

NXP Semiconductors
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
PHB66NQ03LT_7
Product data sheet
Symbol
V
V
V
I
I
P
T
T
Source-drain diode
I
I
Avalanche ruggedness
E
D
DM
S
SM
stg
j
DS
DGR
GS
tot
DS(AL)S
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
source current
peak source current
non-repetitive
drain-source avalanche
energy
Conditions
T
T
V
V
V
see
V
t
T
T
t
V
unclamped; t
p
p
j
j
mb
mb
GS
GS
GS
GS
GS
≤ 10 µs; pulsed; T
≤ 10 µs; pulsed; T
≥ 25 °C; T
≥ 25 °C; T
Figure 3
= 25 °C; see
= 25 °C
= 10 V; T
= 5 V; T
= 5 V; T
= 10 V; T
= 10 V; T
Rev. 07 — 30 January 2009
mb
mb
j
j
p
≤ 175 °C
≤ 175 °C; R
mb
mb
j(init)
= 0.15 ms; R
= 100 °C; see
= 25 °C; see
= 100 °C
= 25 °C
Figure 2
= 25 °C; I
mb
mb
= 25 °C; see
= 25 °C
GS
GS
D
= 20 kΩ
Figure
= 43 A; V
Figure 1
= 50 Ω
1;
Figure 3
sup
N-channel TrenchMOS logic level FET
≤ 25 V;
PHB66NQ03LT
Min
-
-
-20
-
-
-
-
-
-
-55
-55
-
-
-
© NXP B.V. 2009. All rights reserved.
Max
25
25
20
45
40
57
66
228
93
175
175
57
228
90
Unit
V
V
V
A
A
A
A
A
W
°C
°C
A
A
mJ
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