PHB66NQ03LT,118 NXP Semiconductors, PHB66NQ03LT,118 Datasheet - Page 4

• Manufacturer Part Number: PHB66NQ03LT,118
• Description: MOSFET N-CH 25V 66A SOT404
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PHB66NQ03LT,118

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Mounting Type: Surface Mount
• Power - Max: 93W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 12nC @ 5V
• Vgs(th) (max) @ Id: 2V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 66A
• Drain To Source Voltage (vdss): 25V
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 10.5 mOhm @ 25A, 10V
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0105 Ohm @ 10 V
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 66 A
• Power Dissipation: 93000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934056840118::PHB66NQ03LT /T3::PHB66NQ03LT /T3

NXP Semiconductors
PHB66NQ03LT_7
Product data sheet
Fig 1.
Fig 3.
(A)
(%)
I
I
der
D
10
10
120
10
80
40
3
2
1
0
function of mounting base temperature
Normalized continuous drain current as a
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
0
1
50
Limit R
DSon
100
= V
DS
/ I
D
150
T
mb
03aa24
(°C)
DC
Rev. 07 — 30 January 2009
200
10
Fig 2.
P
(%)
der
120
80
40
0
function of mounting base temperature
Normalized total power dissipation as a
0
N-channel TrenchMOS logic level FET
50
t
100 μ s
1 ms
10 ms
100 ms
p
= 10 μ s
V
DS
(V)
PHB66NQ03LT
100
150
© NXP B.V. 2009. All rights reserved.
T
03ag19
mb
03aa16
(°C)
10
200
2
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